Basic semiconductor material science and solidstate physics all terrestrial materials are made up of atoms. New way of plotting currentvoltage characteristics of. Williams, metalsemiconductor contacts, 2nd edition, clarendon press, oxford, 1988. Importance of metal semiconductor contacts is due to l ohmic metal semiconductor junctions e. Download citation metalsemiconductor contacts in this chapter, the basic device.
Metal semiconductor contacts are an obvious component of any semiconductor device. Metalsemiconductor ohmic contacts stanford university. Basically, there are two types of ms contacts that are widely used in semiconductor devices. Practical metalsemiconductor contacts do not always appear to obey the schottky. However, it was not until the twentieth century that the atomic theory of matter became firmly established as an unassailable, demonstrated fact. If thermionic emission is the only transport mechanism in a schottky barrier, the electron current from the semiconductor to the metal increases exponentially with voltage at a forward bias but saturates at reverse bias since the barrier for thermionic. Metal to semiconductor ms junctions are of great importance since they are present in every semiconductor device. Rhoderick, 1988, clarendon press, oxford university press edition, in english 2nd ed.
Metalsemiconductor contacts are an obvious component of any semiconductor device. After the discovery of rectifying behaviors of metalsemiconductor contacts by braun in 1874, a great number of extensive studies were done mainly to understand the rectifying mechanisms and to reveal the characteristic parameters. The small barrier that exists for electron flow from metal to the semiconductor, but vanishes when. Current begins to flow from the semiconductor to the metal. We mainly focus on metal semiconductor contacts on molybdenum disulfide. A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made with pn junctions. Metalsemiconductor contact properties of alcoiicomplex. This can be represented schematically in a manner similar to that shown above for the n. Ohmic contacts are not functional without spin pumping 31. Unlimited viewing of the articlechapter pdf and any associated supplements and figures. Metalsemiconductor contacts kasif nabi imi2015007 department of microelectronics indian institute of information technology allahabad 2nd november 2 november 2015 1 2. Read electrical analysis of organic dyebased mis schottky contacts, microelectronic engineering on deepdyve, the largest online rental service for scholarly research with thousands of academic publications available at your fingertips. Ideal contacts to a heavily doped semiconductor with uniform current density.
Use features like bookmarks, note taking and highlighting while reading metal semiconductor contacts and devices issn. Everyday low prices and free delivery on eligible orders. Our knowledge of metalsemiconductor diodes goes back more than a century. For electronic transport across the metalsemiconductor ms interface, this. On the role of the interface charge in nonideal metal. On the role of the interface charge in nonideal metalsemiconductor contacts on the role of the interface charge in nonideal metalsemiconductor contacts korosak, dean.
A short discussion is also given of practical contacts and their application in semiconductor technology, and. Formation of schottky barrier from metal and semiconductor. Metal contacts to gallium nitride article pdf available in applied physics letters 6222. Pdf metal contacts to gallium nitride researchgate. Metalsemiconductor ms contacts are an essential part of virtually all semi. For a sufficiently large schottky barrier height, where. Rectifying metalsemiconductor contacts are among the most basic devices in the electronic technology area.
The problem with the metalsemiconductor interface, and more general with any hetero. Schematic band diagrams at metal semiconductor contacts without interface states. Topics covered include the factors that determine the height of the schottky barrier, its currentvoltage characteristics, and its capacitance. Electrical analysis of organic dyebased mis schottky contacts. The metal oxide semiconductor field effect transistor mosfet is one of the cornerstones of modern semiconductor technology. Topics covered include the factors that determine the height of the schottky barrier, its currentvoltage. Written for semiconductor technologists and physicists engaged in research on semiconductor interfaces, this text emphasizes practical implications wherever they are relevant to device technology. Whether a given metalsemiconductor junction is an ohmic contact or a schottky barrier depends on the schottky barrier height. A similar rectifying device can also be made from the junction of a ptype semiconductor with a metal. Gibbs free energy of the newly formed phase and the increase in surface. The metal semiconductor ms contact is an important component in the performance of most semiconductor devices in the solid state. The physics and chemistry of the schottky barrier height. Nov 02, 2015 metalsemiconductor contacts kasif nabi imi2015007 department of microelectronics indian institute of information technology allahabad 2nd november 2 november 2015 1 2. Metalsemiconductor interfaces rectifying schottky junction nonrectifying ohmic contacts 3.
Metalsemiconductor contacts schottky contacts metal on lightly doped silicon rectifying ohmic contacts metal on heavily doped silicon low resistance 2. Written for semiconductor technologists and physicists engaged this second edition brings a greatly expanded treatment of the physics of schottkybarrier formation to its comprehensive discussion of. Metaltosemiconductor ms junctions are of great importance since they are present in every semiconductor device. Although transient femtosecond spin current can be induced in a nonmagnetic material 34, spin injection requires magnetic contacts. In this chapter, the basic device physics, the electrical and transport properties, and the formation and characterization of various metalsemiconductor contacts are presented.
Apr 20, 1978 topics covered include the currentvoltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. With a n and ptype semiconductor in case 1 when the metal work function. Metalsemiconductor contacts fermi level pinning is the lack of barrier height modulation with metal work function due to either large density of intrinsic states. Schottky barriers in carbon nanotubemetal contacts. Metal semiconductor contacts and devices issn, cohen.
Rhoderick, 9780198593362, available at book depository with free delivery worldwide. However, a glimpse into most recent literature on the sbh and ohmic contacts still finds. In addition to different device and circuit applications, schottky contacts can also be. We report on the measurements of the heterodimensional schottky barrier height in twodimensional metalsemiconductor field effect transistors 2d mesfets. Xray photoemission determination of the surface fermi level motion and pinning on n and pgan during the formation of au, ni, and ti metal contacts volume 693 kimberly a. In general, any magnetic order suppresses spin scattering. The effect of interface states on the barrier heights of metal semiconductor contacts was first analyzed by cowley and sze 33. The term metal silicon contact includes silicidesi contacts.
Rhoderick, metalsemiconductor contacts, clarendon press, oxford 1978. Metal semiconductor contacts and devices issn kindle edition by cohen, simon s. Metalsemiconductor contacts schottky contacts metal on lightly doped silicon rectifying ohmic contacts metal on heavily doped silicon low resistance 2 november. Metalsemiconductor schottky barrier junctions and their.
After the discovery of rectifying behaviors of metalsemiconductor contacts by braun in 1874, a great number of extensive studies were done mainly to understand the rectifying mechanisms and to reveal the characteristic parameters that control these mechanisms. Metal semiconductor interfaces rectifying schottky junction nonrectifying ohmic contacts 3. As the name implies, the ms junction is that a metal and a semiconductor material are contacted closely. Ideal metalsemiconductor contacts but the point of adding contacts was to apply fields, lets look at this m s metal semiconductor ntype apply positive bias, v v e v e c e i e fs current e fm this lowers e fm below e fs and reduces the barrier seen by electrons. The presentday semiconductor technology would be inconceivable without extensive use of schottky barrier junctions.
Metalsilicon junctions are crucial to the operation of semiconductor devices. The effect of interface states on the barrier heights of metalsemiconductor contacts was first analyzed by cowley and sze 33. Metal semiconductor contact anchit biswas techno india,saltlake 2. The term metalsilicon contact includes silicidesi contacts. Thus, sbh is a crucial parameter for metalsemiconductor spin injection 32,33. Schematic band diagrams at metalsemiconductor contacts without interface states. Williams, metal semiconductor contacts, 2nd edition, clarendon press, oxford, 1988. Schottky barrier parameters of pdti contacts on ntype inp revealed from ivt and cvt measurements. The presentday semiconductor technology would be inconceivable without extensive use of. Europium silicide a prospective material for contacts with. Theory when two substances are in contact, between them there is a charge. Doitpoms tlp library introduction to semiconductors metal.
A fundamental study of advanced metalsemiconductor contacts. Importance of metalsemiconductor contacts is due to l ohmic metalsemiconductor junctions e. This thesis is brought to you for free and open access by the theses and dissertations at digital. Then, under the lowcurrent assumption that the voltage drop across both metalsemiconductor contacts is identical, the iv relation becomes. Metalsemiconductor contacts monographs in electrical and. For example, good ohmic contacts are essential for achieving excellent performance of a semiconductor device, while schottky i. B is significantly higher than the thermal energy kt, the semiconductor is depleted near the metal and behaves as a schottky barrier. It is well known that the quality of metalsemiconductor contacts plays an. They can behave either as a schottky barrier or as an ohmic contact dependent on the characteristics of the interface. We report on the measurements of the heterodimensional schottky barrier height in twodimensional metal semiconductor field effect transistors 2d mesfets. Electrical properties of metal semiconductor contacts digital. Indeed, the ancient greeks put this hypothesis forward over two millennia ago.
It is well known that the quality of metalsemiconductor contacts plays an important role in the performance of various semiconductor devices and integrated circuits. Xray photoemission determination of the surface fermi level. Metalsemiconductor contacts 1988 edition open library. Friend, cavendish laboratory, madingley road, cambridge c b 3 0 h e, u.
In particular, a large mismatch between the fermi energy of the metal and semiconductor can result is a highresistance rectifying contact. The physics of schottky barriers institute of physics. Metalsemiconductor contacts monographs in electrical and electronic engineering rhoderick, e. Jul 27, 2018 with a n and ptype semiconductor in case 1 when the metal work function. Work purpose the determination of the potential difference that appears at the contact surface between a metal and a semiconductor, potential difference that is known under the name of contact, or diffusion, bias.
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